IndiumV3, Main, Repository, bibRecord, 003540

3.5 μm Strain Balanced GaInAs/AlInAs Quantum Cascade Lasers Operating at Room Temperature

Identifieur interne : 003540 ( Main/Repository ); précédent : 003539; suivant : 003541

3.5 μm Strain Balanced GaInAs/AlInAs Quantum Cascade Lasers Operating at Room Temperature

Auteurs : RBID : Pascal:11-0263474

Descripteurs français

Pascal (Inist)
- Déformation mécanique, Laser cascade quantique, Laser semiconducteur, Cavité externe, Température ambiante, Puissance sortie, Composé ternaire, Gallium Arséniure, Indium Arséniure, GaInAs, Substrat InP, As Ga In, InGaAs, AlInAs, 0130C, 4255P.

English descriptors

KwdEn :
- Ambient temperature, External cavity, Gallium Arsenides, Indium Arsenides, Output power, Quantum cascade laser, Semiconductor lasers, Strains, Ternary compounds.

Abstract

We demonstrate room temperature lasing of quantum cascade lasers (QCLs) operating at 3.45 and 3.55 μm under pulsed and continuous wave (CW) operations, respectively. To the best of our knowledge those are the shortest wavelengths ever achieved at room temperature from QCLs with strain balanced GaInAs/AlInAs material on InP substrate. With the back facet high reflection coated, a maximum output power of 60 mW was obtained at 10 °C under CW operation. A tuning range of 124 cm^-1 was obtained in a pulsed mode in external cavity configuration.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 003035

Links to Exploration step

Pascal:11-0263474

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">3.5 μm Strain Balanced GaInAs/AlInAs Quantum Cascade Lasers Operating at Room Temperature</title>
<author><name>FENG XIE</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Corning Incorporated, One Riverfront Plaza</s1>
<s2>Corning, NY, 14831</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Corning, NY, 14831</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Caneau, Catherine" uniqKey="Caneau C">Catherine Caneau</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Corning Incorporated, One Riverfront Plaza</s1>
<s2>Corning, NY, 14831</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Corning, NY, 14831</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Leblanc, Herve P" uniqKey="Leblanc H">Herve P. Leblanc</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Corning Incorporated, One Riverfront Plaza</s1>
<s2>Corning, NY, 14831</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Corning, NY, 14831</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Visovsky, Nick J" uniqKey="Visovsky N">Nick J. Visovsky</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Corning Incorporated, One Riverfront Plaza</s1>
<s2>Corning, NY, 14831</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Corning, NY, 14831</wicri:noRegion>
</affiliation>
</author>
<author><name>YIN WANG</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Dept. of Electrical Engineering, Princeton University</s1>
<s2>Princeton, NJ, 08544</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><settlement type="city">Princeton (New Jersey)</settlement>
<region type="state">New Jersey</region>
</placeName>
<orgName type="university">Université de Princeton</orgName>
</affiliation>
</author>
<author><name sortKey="Wysocki, Gerard" uniqKey="Wysocki G">Gerard Wysocki</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Dept. of Electrical Engineering, Princeton University</s1>
<s2>Princeton, NJ, 08544</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><settlement type="city">Princeton (New Jersey)</settlement>
<region type="state">New Jersey</region>
</placeName>
<orgName type="university">Université de Princeton</orgName>
</affiliation>
</author>
<author><name sortKey="Hughes, Lawrence C" uniqKey="Hughes L">Lawrence C. Hughes</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Corning Incorporated, One Riverfront Plaza</s1>
<s2>Corning, NY, 14831</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Corning, NY, 14831</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zah, Chung En" uniqKey="Zah C">Chung-En Zah</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Corning Incorporated, One Riverfront Plaza</s1>
<s2>Corning, NY, 14831</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Corning, NY, 14831</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0263474</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0263474 INIST</idno>
<idno type="RBID">Pascal:11-0263474</idno>
<idno type="wicri:Area/Main/Corpus">003035</idno>
<idno type="wicri:Area/Main/Repository">003540</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0277-786X</idno>
<title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title>
<title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term>
<term>External cavity</term>
<term>Gallium Arsenides</term>
<term>Indium Arsenides</term>
<term>Output power</term>
<term>Quantum cascade laser</term>
<term>Semiconductor lasers</term>
<term>Strains</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Déformation mécanique</term>
<term>Laser cascade quantique</term>
<term>Laser semiconducteur</term>
<term>Cavité externe</term>
<term>Température ambiante</term>
<term>Puissance sortie</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>GaInAs</term>
<term>Substrat InP</term>
<term>As Ga In</term>
<term>InGaAs</term>
<term>AlInAs</term>
<term>0130C</term>
<term>4255P</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We demonstrate room temperature lasing of quantum cascade lasers (QCLs) operating at 3.45 and 3.55 μm under pulsed and continuous wave (CW) operations, respectively. To the best of our knowledge those are the shortest wavelengths ever achieved at room temperature from QCLs with strain balanced GaInAs/AlInAs material on InP substrate. With the back facet high reflection coated, a maximum output power of 60 mW was obtained at 10 °C under CW operation. A tuning range of 124 cm<sup>-1</sup>
 was obtained in a pulsed mode in external cavity configuration.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0>
</fA01>
<fA02 i1="01"><s0>PSISDG</s0>
</fA02>
<fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0>
</fA03>
<fA05><s2>7953</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>3.5 μm Strain Balanced GaInAs/AlInAs Quantum Cascade Lasers Operating at Room Temperature</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Novel in-plane semiconductor lasers X : 25-28 January 2011, San Francisco CA</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>FENG XIE</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>CANEAU (Catherine)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LEBLANC (Herve P.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>VISOVSKY (Nick J.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>YIN WANG</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>WYSOCKI (Gerard)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>HUGHES (Lawrence C.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>ZAH (Chung-En)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>BELYANIN (Alexey A.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>SMOWTON (Peter M.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Corning Incorporated, One Riverfront Plaza</s1>
<s2>Corning, NY, 14831</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Dept. of Electrical Engineering, Princeton University</s1>
<s2>Princeton, NJ, 08544</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA18 i1="01" i2="1"><s1>SPIE</s1>
<s3>USA</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s2>79531A.1-79531A.7</s2>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA25 i1="01"><s1>SPIE</s1>
<s2>Bellingham WA</s2>
</fA25>
<fA26 i1="01"><s0>978-0-8194-8490-1</s0>
</fA26>
<fA43 i1="01"><s1>INIST</s1>
<s2>21760</s2>
<s5>354000174736470290</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>11 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0263474</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We demonstrate room temperature lasing of quantum cascade lasers (QCLs) operating at 3.45 and 3.55 μm under pulsed and continuous wave (CW) operations, respectively. To the best of our knowledge those are the shortest wavelengths ever achieved at room temperature from QCLs with strain balanced GaInAs/AlInAs material on InP substrate. With the back facet high reflection coated, a maximum output power of 60 mW was obtained at 10 °C under CW operation. A tuning range of 124 cm<sup>-1</sup>
 was obtained in a pulsed mode in external cavity configuration.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B00A30C</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Déformation mécanique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Strains</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Laser cascade quantique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Quantum cascade laser</s0>
<s5>11</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>12</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
<s5>12</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Cavité externe</s0>
<s5>37</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>External cavity</s0>
<s5>37</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Cavidad externa</s0>
<s5>37</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Température ambiante</s0>
<s5>41</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Ambient temperature</s0>
<s5>41</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Puissance sortie</s0>
<s5>42</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Output power</s0>
<s5>42</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Potencia salida</s0>
<s5>42</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>50</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>50</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>GaInAs</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Substrat InP</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>AlInAs</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>0130C</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fN21><s1>178</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Novel in-plane semiconductor lasers</s1>
<s2>10</s2>
<s3>San Francisco CA USA</s3>
<s4>2011</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 003540 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 003540 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:11-0263474
   |texte=   3.5 μm Strain Balanced GaInAs/AlInAs Quantum Cascade Lasers Operating at Room Temperature
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

3.5 μm Strain Balanced GaInAs/AlInAs Quantum Cascade Lasers Operating at Room Temperature

3.5 μm Strain Balanced GaInAs/AlInAs Quantum Cascade Lasers Operating at Room Temperature

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri